1/8 june 2000 STU11NC60 n-channel 600v - 0.48 w - 11a max220 powermesh ? ii mosfet n typical r ds (on) = 0.48 w n extremely high dv/dt capability n 100% avalanche tested n new high voltage benchmark n gate charge minimized description the powermesh ? ii is the evolution of the first generation of mesh overlay ? . the layout re- finements introduced greatly improve the ron*area figure of merit while keeping the device at the lead- ing edge for what concerns swithing speed, gate charge and ruggedness. applications n high current, high speed switching n uninterruptible power supplies (ups) n dc-ac converters for telecom, industrial, and lighting equipment absolute maximum ratings ( ? )pulse width limited by safe operating area type v dss r ds(on) i d STU11NC60 600v < 0.55 w 11 a symbol parameter value unit v ds drain-source voltage (v gs =0) 600 v v dgr drain-gate voltage (r gs =20k w ) 600 v v gs gate- source voltage 30 v i d drain current (continuos) at t c =25 c 11 a i d drain current (continuos) at t c = 100 c 8a i dm ( l ) drain current (pulsed) 44 a p tot total dissipation at t c =25 c 160 w derating factor 1.28 w/ c dv/dt(1) peak diode recovery voltage slope 4.5 v/ns t stg storage temperature 65 to 150 c t j max. operating junction temperature 150 c (1)i sd 11a, di/dt 100a/ m s, v dd v (br)dss ,t j t jmax. 1 2 3 max220 internal schematic diagram
STU11NC60 2/8 thermal data avalanche characteristics electrical characteristics (tcase = 25 c unless otherwise specified) off on (1) dynamic rthj-case thermal resistance junction-case max 0.78 c/w rthj-amb thermal resistance junction-ambient max 62.5 c/w rthc-sink thermal resistance case-sink typ 0.5 c/w t l maximum lead temperature for soldering purpose 300 c symbol parameter max value unit i ar avalanche current, repetitive or not-repetitive (pulse width limited by t j max) 12 a e as single pulse avalanche energy (starting t j =25 c, i d =i ar ,v dd =50v) 400 mj symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 m a, v gs =0 600 v i dss zero gate voltage drain current (v gs =0) v ds = max rating 1 m a v ds = max rating, t c = 125 c 50 m a i gss gate-body leakage current (v ds =0) v gs = 30v 100 na symbol parameter test conditions min. typ. max. unit v gs(th) gate threshold voltage v ds =v gs ,i d = 250 m a 234v r ds(on) static drain-source on resistance v gs = 10v, i d =6a 0.48 0.55 w i d(on) on state drain current v ds >i d(on) xr ds(on)max, v gs =10v 11 a symbol parameter test conditions min. typ. max. unit g fs forward transconductance v ds >i d(on) xr ds(on)max, i d =6a 13 s c iss input capacitance v ds = 25v, f = 1 mhz, v gs =0 2150 pf c oss output capacitance 275 pf c rss reverse transfer capacitance 39 pf
3/8 STU11NC60 electrical characteristics (continued) switching on switching off source drain diode note: 1. pulsed: pulse duration = 300 m s, duty cycle 1.5 %. 2. pulse width limited by safe operating area. symbol parameter test conditions min. typ. max. unit t d(on) turn-on delay time rise time v dd = 300v, i d =6a r g = 4.7 w ,v gs = 10v (see test circuit, figure 3) 20 ns t r 15 ns q g total gate charge v dd = 480v, i d =12a, v gs = 10v, r g =4.7 w 65 90 nc q gs gate-source charge 13 nc q gd gate-drain charge 28 nc symbol parameter test conditions min. typ. max. unit t r(voff) off-voltage rise time v dd = 480v, i d =12a, r g = 4.7 w, v gs =10v (see test circuit, figure 5) 14 ns t f fall time 25 ns t c cross-over time 30 ns symbol parameter test conditions min. typ. max. unit i sd source-drain current 11 a i sdm (2) source-drain current (pulsed) 44 a v sd (1) forward on voltage i sd =12a,v gs =0 1.6 v t rr reverse recovery time i sd = 12 a, di/dt = 100a/ m s, v dd = 100v, t j = 150 c (see test circuit, figure 5) 590 ns q rr reverse recovery charge 5.6 m c i rrm reverse recovery current 19 a safe operating area thermal impedance
STU11NC60 4/8 capacitance variations gate charge vs gate-source voltage static drain-source on resistance transconductance transfer characteristics output characteristics
5/8 STU11NC60 normalized gate thereshold voltage vs temp. normalized on resistance vs temperature source-drain diode forward characteristics
STU11NC60 6/8 fig. 5: test circuit for inductive load switching and diode recovery times fig. 4: gate charge test circuit fig. 2: unclamped inductive waveform fig. 1: unclamped inductive load test circuit fig. 3: switching times test circuit for resistive load
STU11NC60 7/8 dim. mm inch min. typ. max. min. typ. max. a 4.3 4.6 0.169 0.181 a1 2.2 2.4 0.087 0.094 a2 2.9 3.1 0.114 0.122 b 0.7 0.93 0.027 0.036 b1 1.25 1.4 0.049 0.055 b2 1.2 1.38 0.047 0.054 c 0.45 0.6 0.18 0.023 d 15.9 16.3 0.626 0.641 d1 9 9.35 0.354 0.368 d2 0.8 1.2 0.031 0.047 d3 2.8 3.2 0.110 0.126 e 2.44 2.64 0.096 0.104 e 10.05 10.35 0.396 0.407 l 13.2 13.6 0.520 0.535 l1 3 3.4 0.118 0.133 a a2 a1 c d3 d1 d2 d b1 b2 b e l l1 e p011r max220 mechanical data
STU11NC60 8/8 information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specification mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectronics. the st logo is a trademark of stmicroelectronics ? 2000 stmicroelectronics printed in italy all rights reserved stmicroelectronics group of companies australia - brazil - china - finland - france - germany - hong kong - india - italy - japan - malaysia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - u.s.a. http://www.st.com
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